Method for processing oxide semiconductor film and method for manufacturing semiconductor device

摘要

To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.

主权项

1. A semiconductor device comprising:
an oxide semiconductor layer over an insulating surface, the oxide semiconductor layer comprising:
a source region including a first region;a drain region including a second region; anda channel region including a third region; a first insulating layer over the oxide semiconductor layer; a gate electrode over the insulating layer; and a second insulating layer over the gate electrode, wherein the source region and the drain region contains an impurity, wherein the source region and the drain region are formed in a self-aligned manner with respect to the gate electrode, wherein the first region and the second region includes a metal element, wherein the metal element is not a main component of the second insulating layer, wherein a concentration of oxygen in the first region is lower than a concentration of oxygen in the third region, and wherein a concentration of oxygen in the second region is lower than the concentration of oxygen in the third region.