Process for depositing films simultaneously onto both sides of a substrate

摘要

A process for the simultaneous deposition of films onto both sides of a substrate (2), which comprises in particular introducing a substrate (2) into a reaction chamber (106, 206) or making said substrate run therethrough, in which chamber at least two electrodes (110, 210) are placed. At least one dielectric barrier (14, 114) is placed between these at least two electrodes (110, 210). An adjustable inductor (L) is placed in the secondary circuit of the transformer in parallel with the circuit comprising the at least two electrodes. A high-frequency electrical voltage is generated, said voltage being such that it generates a filamentary plasma (112, 212) on each side of the substrate between the at least two electrodes (110, 210).

主权项

1. A process for simultaneous deposition onto both sides of a substrate, the process comprising:
(A) introducing the substrate comprising two sides into, or making the substrate run through a reaction chamber comprising two ends and filled with an atmosphere, in which at least two electrodes are placed, the substrate being introduced between the at least two electrodes, at least one dielectric barrier being placed between the at least two electrodes; (B) supplying a power supply that includes an HF transformer comprising a primary and a secondary circuit, the at least two electrodes being connected to terminals of the secondary circuit; (C) generating a voltage in the secondary circuit of the transformer, a frequency of the voltage being in a range from 10 kHz to 1000 kHz, said voltage being such that it generates a filamentary plasma on each side of the substrate between the at least two electrodes; (D) providing an adjustable inductor placed in parallel with an intrinsic inductor of the secondary circuit comprising the at least two electrodes so as to reduce a phase shift between a voltage and a current that are generated in the secondary circuit of the transformer; (E) introducing at least one mixture into the reaction chamber, on each side of the substrate, the composition of said mixture being such that, upon contact with the plasma, the mixture decomposes and generates species capable of being deposited as a film onto the corresponding side of the substrate; (F) adapting at least one of the voltage delivered by the power supply, the frequency delivered by the power supply, and an inductance of the adjustable inductor placed in parallel with the secondary circuit comprising the at least two electrodes at a start of or during the process; (G) adapting at least one of the voltage delivered by the secondary circuit, the frequency delivered by the secondary circuit, and the inductance of the inductor so as to promote production of harmonics extending a time during which the current flows between the electrodes; and (H) keeping the substrate in the chamber for a period of time sufficient to obtain a film of desired thickness on each side of said substrate.