发明名称 System and method for manufacturing semiconductor device
摘要 According to one embodiment, a system for manufacturing a semiconductor device includes a spontaneous joining unit and a deformative joining unit. The spontaneous joining unit overlaps a first substrate and a second substrate and spontaneously joins mutual center portions of respective joint faces of the first substrate and the second substrate. The deformative joining unit deforms at least one peripheral portion of the respective joint faces of the first substrate and second substrate joined by the spontaneous joining unit toward the other peripheral portion and joins the mutual peripheral portions of the respective joint faces.
申请公布号 US9004337(B2) 申请公布日期 2015.04.14
申请号 US201213479968 申请日期 2012.05.24
申请人 Kabushiki Kaisha Toshiba 发明人 Hongo Satoshi;Takahashi Kenji;Tanida Kazumasa
分类号 B31B1/68;H01L21/20;H01L21/67;H01L21/762 主分类号 B31B1/68
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A system for manufacturing a semiconductor device, comprising: a spontaneous joining unit which overlaps a first substrate and a second substrate and which spontaneously joins mutual center portions of respective joint faces of the first substrate and the second substrate; and a deformative joining unit which deforms at least one peripheral portion of the respective joint faces of the first substrate and second substrate joined by the spontaneous joining unit toward the other peripheral portion and which joins the mutual peripheral portions of the respective joint faces, wherein the deformative joining unit includes a pressing bit to press a round peripheral portion of the first substrate or second substrate to be deformed while moving on the peripheral portion in a radial direction of the substrate in a reciprocated manner.
地址 Tokyo JP