| 发明名称 | Page buffer, memory device comprising page buffer, and related method of operation | ||
| 摘要 | A page buffer comprises a static latch configured to store data received from an external device, and a dynamic latch configured to receive the data stored in the static latch through a floating node, the dynamic latch comprising a storage capacitor, a write transistor configured to write the data of the floating node to the storage capacitor, and a read transistor configured to read the data of the storage capacitor, and the write transistor and the read transistor sharing the floating node. | ||
| 申请公布号 | US9007850(B2) | 申请公布日期 | 2015.04.14 |
| 申请号 | US201213718105 | 申请日期 | 2012.12.18 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Joo Sang-Hyun;Park Il-Han;Song Ki-Hwan |
| 分类号 | G11C7/10;G11C11/24;G11C16/02;G11C16/10 | 主分类号 | G11C7/10 |
| 代理机构 | Volentine & Whitt, PLLC | 代理人 | Volentine & Whitt, PLLC |
| 主权项 | 1. A page buffer, comprising: a static latch configured to store data received from an external device; and a dynamic latch configured to receive the data stored in the static latch through a floating node, the dynamic latch comprising a storage capacitor, a write transistor configured to write the data of the floating node to the storage capacitor, and a read transistor configured to read the data of the storage capacitor, and the write transistor and the read transistor sharing the floating node. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||