Thin channel MOSFET with silicide local interconnect

摘要

A semiconductor structure and method of manufacturing the same are provided. The semiconductor structure includes a semiconductor substrate having an isolated area comprising a first region and a second region. A first raised RSD region is formed in the first region and a second RSD region is formed in the second region. The first RSD region and second RSD region is separated laterally by a portion of the isolated area. A continuous silicide interconnect structure is formed overlying the first RSD region, the second RSD region and the portion of the isolated area situated between RSD regions. A contact may be formed on the surface of the silicide interconnect.

主权项

1. A method of forming an interconnect structure, the method comprising:
forming a first raised source/drain (RSD) region of a first transistor on a surface of a substrate and a second RSD region of a second transistor on the surface of the substrate, the first and second RSD regions being separated by a third region comprising a portion of the substrate; and forming a continuous electrical contact between the first RSD region and the second RSD region, the continuous electrical contact comprising a single silicide layer covering the first RSD region, the second RSD region, and the third region, wherein a substantial portion of the single silicide layer is below the surface of the substrate in the third region.