发明名称 Semiconductor device
摘要 A semiconductor device includes a plurality of memory cells including a first transistor and a second transistor, a reading circuit including an amplifier circuit and a switch element, and a refresh control circuit. A first channel formation region and a second channel formation region contain different materials as their respective main components. A first gate electrode is electrically connected to one of a second source electrode and a second drain electrode. The other of the second source electrode and the second drain electrode is electrically connected to one of input terminals of the amplifier circuit. An output terminal of the amplifier circuit is connected to the other of the second source electrode and the second drain electrode through the switch element. The refresh control circuit is configured to control whether the switch element is turned on or off.
申请公布号 US9007813(B2) 申请公布日期 2015.04.14
申请号 US201313795244 申请日期 2013.03.12
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Saito Toshihiko;Matsuzaki Takanori;Nagatsuka Shuhei;Inoue Hiroki
分类号 G11C11/24;H01L29/78;G11C11/403;G11C11/406;G11C16/04;H01L27/115;H01L27/12 主分类号 G11C11/24
代理机构 Robinson Intellectual Property Law Office, P.C. 代理人 Robinson Eric J.;Robinson Intellectual Property Law Office, P.C.
主权项 1. A semiconductor device comprising: a memory cell comprising: a first channel formation region comprising silicon;a first gate electrode over the first channel formation region with a first gate insulating layer located therebetween;an insulating layer over the first channel formation region;a second channel formation region over the insulating layer, the second channel formation region comprising an oxide semiconductor;a second gate electrode overlapping with the second channel formation region with a second gate insulating layer located therebetween;a source electrode electrically connected to the second channel formation region; anda drain electrode electrically connected to the second channel formation region;wherein one of the source electrode and the drain electrode is electrically connected to the first gate electrode, a first circuit comprising: a switch element; andan amplifier circuit whose output terminal is electrically connected to the other one of the source electrode and the drain electrode through the switch element; and a second circuit configured to control whether the switch element is turned on or off.
地址 Atsugi-shi, Kanagawa-ken JP