Nonvolatile semiconductor memory device and method for manufacturing the same

摘要

According to one embodiment, a nonvolatile semiconductor memory device includes a silicon-containing substrate, a plurality of memory cells, and an insulating film. The substrate includes silicon. The plurality of memory cells is provided on the substrate with a spacing therebetween. The insulating film is provided on a sidewall of the memory cell. The insulating film includes a protrusion protruding toward an adjacent one of the memory cells above a void portion is provided between the memory cells.

主权项

1. A nonvolatile semiconductor memory device comprising:
a silicon-containing substrate; a plurality of memory cells provided on the substrate with a spacing therebetween; and an insulating film including a first silicon oxide film and a second silicon oxide film, the first silicon oxide film provided on a sidewall of the memory cell, and on a surface of the silicon-containing substrate between the memory cells, the second silicon oxide film provided on the first silicon oxide film above a void portion provided between the memory cells, the second silicon oxide film including a protrusion protruding toward an adjacent one of the memory cells, a material of the second silicon oxide film being same as a material of the first silicon oxide film; the memory cells including:
a tunnel insulating film provided on the substrate;a floating gate provided on the tunnel insulating film;an intergate insulating film provided on the floating gate; anda control gate provided on the intergate insulating film; the protrusion is provided above an upper surface of the floating gate; and a height of an upper end of the protrusion is lower than a height of an upper end of the control gate.