| 发明名称 | Light emitting diode element | ||
| 摘要 | An object of the present invention is to provide a GaN-based light emitting diode element having a great emission efficiency and suitable for an excitation light source for a white LED. The GaN-based light emitting diode element includes an n-type conductive m-plane GaN substrate, a light emitting diode structure which is formed of a GaN-based semiconductor, on a front face of the m-plane GaN substrate, and an n-side ohmic electrode formed on a rear face of the m-plane GaN substrate, wherein a forward voltage is 4.0 V or less when a forward current applied to the light emitting diode element is 20 mA. | ||
| 申请公布号 | US9006792(B2) | 申请公布日期 | 2015.04.14 |
| 申请号 | US201313841751 | 申请日期 | 2013.03.15 |
| 申请人 | Mitsubishi Chemical Corporation | 发明人 | Haruta Yuki |
| 分类号 | H01L21/02;H01L33/36;H01L33/32;H01L33/16;H01L33/22;H01L33/38 | 主分类号 | H01L21/02 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A semiconductor light emitting element comprising: an n-type conductive m-plane GaN substrate; a light emitting structure which is formed of a GaN-based semiconductor, on a front face of the m-plane GaN substrate; and an n-side ohmic electrode formed on a rear face, said rear face polished with an acidic CMP slurry, of the m-plane GaN substrate, wherein a forward voltage is 4.0 V or less when a forward current applied to the element is 20 mA. | ||
| 地址 | Tokyo JP | ||