Fin structure of semiconductor device

摘要

The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising a lower portion comprising a first semiconductor material having a first lattice constant; an upper portion comprising the first semiconductor material having the first lattice constant; a middle portion between the lower portion and upper portion, wherein the middle portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; and a pair of notches extending into opposite sides of the middle portion; and an isolation structure surrounding the fin structure, wherein a top surface of the isolation structure is higher than a top surface of the pair of notches.

主权项

1. A fin field effect transistor (FinFET) comprising:
a substrate comprising a major surface; a fin structure comprising:
a lower portion protruding from the major surface of the substrate, the lower portion comprising a first semiconductor material having a first lattice constant;an upper portion comprising the first semiconductor material having the first lattice constant;a middle portion between the lower portion and upper portion, wherein the middle portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; anda pair of notches extending into opposite sides of the second semiconductor material of the fin structure; and an isolation structure surrounding the fin structure, wherein a top surface of the isolation structure is higher than a top surface of the pair of notches.