Semiconductor light emitting element and method for manufacturing the same

摘要

According to one embodiment, a semiconductor light emitting element includes a first semiconductor layer of an n-type, a second semiconductor layer of a p-type, and a light emitting unit. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer includes a nitride semiconductor. The light emitting unit is provided between the first semiconductor layer and the second semiconductor layer. The light emitting unit includes a plurality of well layers stacked alternately with a plurality of barrier layers. The well layers include a first p-side well layer most proximal to the second semiconductor layer, and a second p-side well layer second most proximal to the second semiconductor layer. A localization energy of excitons of the first p-side well layer is smaller than a localization energy of excitons of the second p-side well layer.

主权项

1. A semiconductor light emitting element, comprising:
a first semiconductor layer of an n-type including a nitride semiconductor; a second semiconductor layer of a p-type including a nitride semiconductor; and a light emitting unit provided between the first semiconductor layer and the second semiconductor layer, the light emitting unit including a plurality of well layers stacked alternately with a plurality of barrier layers, the well layers including a first p-side well layer most proximal to the second semiconductor layer, and a second p-side well layer second most proximal to the second semiconductor layer, a localization energy of excitons of the first p-side well layer being smaller than a localization energy of excitons of the second p-side well layer.