发明名称 |
Semiconductor device with air gap and method of fabricating the same |
摘要 |
A method of fabricating a semiconductor device and a semiconductor device formed by the method. The method includes form a stack conductive structure by stacking a first conductive pattern and an insulation pattern over a substrate; forming a sacrificial pattern over sidewalls of the stack conductive structure; forming a second conductive pattern having a recessed surface lower than a top surface of the stack conductive structure; forming a sacrificial spacer to expose sidewalls of the insulation pattern by removing an upper portion of the sacrificial pattern; reducing a width of the exposed portion of the insulation patters; forming a capping spacer to cap the sidewalls of the insulation pattern having the reduced width over the sacrificial spacer; and forming an air gap between the first conductive pattern and the second conductive pattern by converting the sacrificial spacer to volatile byproducts. |
申请公布号 |
US9006078(B2) |
申请公布日期 |
2015.04.14 |
申请号 |
US201314015423 |
申请日期 |
2013.08.30 |
申请人 |
SK Hynix Inc. |
发明人 |
Kim Myung-Ok |
分类号 |
H01L21/76;H01L21/4763;H01L21/768;H01L23/522;H01L21/764;H01L27/108 |
主分类号 |
H01L21/76 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. A method for fabricating a semiconductor device, the method comprising:
form a stack conductive structure by stacking a first conductive pattern and an insulation pattern over a substrate; forming a sacrificial pattern over sidewalls of the stack conductive structure; forming a second conductive pattern having a recessed surface lower than a top surface of the stack conductive structure; forming a sacrificial spacer to expose sidewalls of the insulation pattern by removing an upper portion of the sacrificial pattern; reducing a width of the exposed portion of the insulation pattern; forming a capping spacer to cap the sidewalls of the insulation pattern having the reduced width over the sacrificial spacer; and forming an air gap between the first conductive pattern and the second conductive pattern by converting the sacrificial spacer to volatile byproducts. |
地址 |
Gyeonggi-do KR |