High voltage hybrid polymeric-ceramic dielectric capacitor

摘要

An integrated circuit includes isolation capacitors which include a silicon dioxide dielectric layer and a polymer dielectric layer over the layer of silicon dioxide. The silicon dioxide dielectric layer and the polymer dielectric layer extend across the integrated circuit. Top plates of the isolation capacitors have bond pads for wire bonds or bump bonds. Bottom plates of the isolation capacitors are connected to components of the integrated circuit. Other bond pads are connected to components in the integrated circuit through vias through the silicon dioxide dielectric layer and the polymer dielectric layer.

主权项

1. A method of forming an integrated circuit, comprising the steps of:
providing a substrate comprising a semiconductor; forming a plurality of transistors in said substrate; forming at least one metal level over said substrate, said metal level containing metal interconnects; forming a bottom plate of an isolation capacitor; forming a silicon dioxide dielectric layer of said isolation capacitor over said bottom plate; forming a polymer dielectric layer of said isolation capacitor over said silicon dioxide dielectric layer, said polymer dielectric layer extending across said integrated circuit; forming a via hole through said polymer dielectric layer; forming a top plate of said isolation capacitor over said polymer dielectric layer; forming a bond pad on said top plate; and forming another bond pad outside said isolation capacitor, said another bond pad being electrically coupled to an instance of said metal interconnects through a via in said via hole.