System for frequency conversion, semiconducting device and method for operating and manufacturing the same

摘要

An edge-emitting semiconductor component, comprising a semiconductor substrate layer and epitaxially on-grown semiconductor layers, is disclosed. According to the invention an active zone of the semiconductor layers is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and generate an optical radiation of a second wavelength that is shorter than the first wavelength. A step of multiplying the first wavelength of the pumped optical radiation to a second harmonic using a nonlinear crystal is advantageously made redundant. Furthermore, a system for frequency conversion is disclosed, comprising the semiconductor component, a pump laser diode designed to generate the pumped optical radiation and methods for manufacturing the semiconductor component and operating the system for frequency conversion.

主权项

1. A system for frequency conversion, comprising a pump laser diode and an edge-emitting semiconductor component with the pump laser diode designed to generate pumped optical radiation of a first wavelength and provided at a spacing of the edge-emitting semiconductor component that comprises:
a semiconductor substrate layer and semiconductor layers epitaxially grown onto the semiconductor substrate layer which include an active zone and a waveguide layer, wherein an entrance facet and an exit facet are laterally located with respect to the active zone, wherein the active zone is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and to generate an optical radiation of a second wavelength that is shorter than the first wavelength, without multiplying the first wavelength of the pumped optical radiation to a second harmonic using a nonlinear crystal, characterized in that the active zone comprises a cavity, said cavity comprising a resonant frequency that causes a resonance peak of the optical radiation.