Circuit and system of protective mechanisms for programmable resistive memories

摘要

Programmable resistive memory using at least one diodes as program selectors can be data protected by programming protection bits in a non-volatile protection bit register. The data stored in the protection bit register can be used to enable or disable reading or writing in part or the whole programmable resistive memory. The data stored in the protection bit register can also be used to enable or enable scrambling the addresses to allow accessing the programmable resistive memory array. Similarly, the data stored in the protection bit register can be used to scramble data when writing into and descramble data when reading from the programmable resistive memory. Keys can be provided for address or data scrambling. The non-volatile protection bit register can be built with the kind of cells as the main array and/or integrated with the main array in the programmable resistive memory.

主权项

1. A programmable resistive memory, comprising:
a plurality of programmable resistive cells, at least one of the programmable resistive cells comprising:
a programmable resistive element coupled to at least one diodes as program selectors fabricated in standard CMOS process; andat least one non-volatile register to store protection bit information, and wherein the data stored in the non-volatile register being operable to scramble addresses or data when accessing the programmable resistive memory.