| 发明名称 | Solid state imaging device having a photoelectric conversion layer with plural silicon germanium layers, and method of manufacturing | ||
| 摘要 | According to one embodiment, a solid state imaging device includes a first SiGe layer provided at an uppermost layer of a photoelectric conversion layer from the viewpoint of an incident light side, and a second SiGe layer provided under the first SiGe layer in the photoelectric conversion layer and having a higher Ge concentration than the first SiGe layer. | ||
| 申请公布号 | US9006634(B2) | 申请公布日期 | 2015.04.14 |
| 申请号 | US201213724448 | 申请日期 | 2012.12.21 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Sasaki Hiroki |
| 分类号 | H01L27/00;H01L31/0312;H01L31/18;H01L27/146 | 主分类号 | H01L27/00 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A solid state imaging device comprising: a first SiGe layer provided at an uppermost layer of a photoelectric conversion layer from the viewpoint of an incident light side; a second SiGe layer provided under the first SiGe layer in the photoelectric conversion layer and having a higher Ge concentration than the first SiGe layer; a third SiGe layer provided under the second SiGe layer in the photoelectric conversion layer and having a lower Ge concentration than the second SiGe layer; and a Si layer provided under the third SiGe layer in the photoelectric conversion layer. | ||
| 地址 | Tokyo JP | ||