发明名称 Tool for manufacturing semiconductor structures and method of use
摘要 A tool and method is provided for mixing multiple components and feeding a single blend of the multiple components into the tool. The method includes adjusting a concentration of etchant solution. The method includes determining an etch target for each batch of wafers of a plurality of batches of wafers entering an etch chamber of a wafer processing tool. The method further includes adjusting a concentration of 40% NH4F to 49% HF for the each batch of wafers of the plurality of batches of wafers entering the wafer processing tool during a single run.
申请公布号 US9005464(B2) 申请公布日期 2015.04.14
申请号 US201113169418 申请日期 2011.06.27
申请人 International Business Machines Corporation 发明人 Arndt Russell H.;Hilscher David F.
分类号 C03C15/00;C03C25/68;H01L21/302;H01L21/461;C09K13/08;H01L21/311;H01L21/67 主分类号 C03C15/00
代理机构 Roberts, Mlotkowski, Safran & Cole, P.C. 代理人 Meyers Steven;Roberts, Mlotkowski, Safran & Cole, P.C.
主权项 1. A method of adjusting a concentration of etchant solution comprising: determining an etch target for each batch of wafers of a plurality of batches of wafers entering an etch chamber of a wafer processing tool; and adjusting a concentration of 40% NH4F to 49% HF in the wafer processing tool for the each batch of wafers of the plurality of batches of wafers entering the wafer processing tool based on the determined etch target for each batch of wafers, wherein: each batch of wafers enters the wafer processing tool during a single run of the wafer processing tool;each batch of wafers includes a plurality of wafers;the determining comprises: determining that a wafer of a first batch of the plurality of batches of wafers has a first etch target which is a smallest etch target of the plurality of wafers included in the first batch, anddetermining that a wafer of a second batch of the plurality of batches of wafers has a second etch target which is a smallest etch target of the plurality of wafers included in the second batch; andthe adjusting comprises: for the first batch, adjusting the concentration of the 40% NH4F to 49% HF to a first predetermined concentration corresponding to the first etch target, andfor the second batch, adjusting the concentration of the 40% NH4F to 49% HF to a second predetermined concentration corresponding to the second etch target.
地址 Armonk NY US