Method of making a semiconductor device having a post-passivation interconnect structure

摘要

A method of making a semiconductor device includes forming a passivation layer overlying a semiconductor substrate, the semiconductor substrate having a first region and a second region, wherein the first region is a conductive pad and the second region is adjacent to the first region. The method further includes forming a first protective layer overlying the passivation layer and forming an interconnect layer overlying the first protective layer. The method further includes forming a plurality of slots in the second region and forming a second protective layer overlying the interconnect layer, wherein the second protective layer fills each slot of the plurality of slots. The method further includes exposing a portion of the interconnect layer through the second protective layer; forming a barrier layer on the exposed portion of the interconnect layer; and forming a solder bump on the barrier layer.

主权项

1. A method of making a semiconductor device, the method comprising:
forming a passivation layer overlying a semiconductor substrate, the semiconductor substrate having a first region and a second region, wherein the first region is a conductive pad and the second region is adjacent to the first region; forming a first protective layer overlying the passivation layer; forming an interconnect layer overlying the first protective layer; forming a plurality of slots in the second region; forming a second protective layer overlying the interconnect layer, wherein the second protective layer fills each slot of the plurality of slots; exposing a portion of the interconnect layer through the second protective layer; forming a barrier layer on the exposed portion of the interconnect layer; and forming a solder bump on the barrier layer.