Semiconductor structures and devices

摘要

Methods of forming semiconductor structures that include bodies of a semiconductor material disposed between rails of a dielectric material are disclosed. Such methods may include filling a plurality of trenches in a substrate with a dielectric material and removing portions of the substrate between the dielectric material to form a plurality of openings. In some embodiments, portions of the substrate may be undercut to form a continuous void underlying the bodies and the continuous void may be filled with a conductive material. In other embodiments, portions of the substrate exposed within the openings may be converted to a silicide material to form a conductive material under the bodies. For example, the conductive material may be used as a conductive line to electrically interconnect memory device components. Semiconductor structures and devices formed by such methods are also disclosed.

主权项

1. A semiconductor structure, comprising:
rails of dielectric material protruding above a substrate; and discrete regions of semiconductor material suspended between adjacent rails of the dielectric material, the discrete regions of semiconductor material separated from the substrate by a continuous void extending in a first direction parallel to the rails of dielectric material and in a second direction from a first rail of adjacent rails of the dielectric material to a second rail of adjacent rails of the dielectric material.