Display device and semiconductor device

摘要

A display device includes a first electrode, a second electrode, an organic light emitting layer, a first transistor, and a second transistor. The first transistor includes a first semiconductor layer, a first conductive unit, a second conductive unit, a first gate electrode, and a first gate insulating film. The second transistor includes a second semiconductor layer, a third conductive unit, a fourth conductive unit, a second gate electrode, and a second gate insulating film. An amount of hydrogen included in the first gate insulating film is larger than an amount of hydrogen included in the second gate insulating film.

主权项

1. A display device comprising:
a first electrode being optical transparency; a second electrode opposing the first electrode; an organic light emitting layer provided between the first electrode and the second electrode; a first transistor including:
a first semiconductor layer including a first portion, a second portion, and a third portion provided between the first portion and the second portion;a first conductive unit electrically connected to one of the first electrode and the second electrode and electrically connected to the first portion;a second conductive unit separated from the first conductive unit and electrically connected to the second portion;a first gate electrode separated from the first conductive unit, the second conductive unit, and the first semiconductor layer, and the first gate electrode opposing the third portion; anda first gate insulating film provided between the third portion and the first gate electrode; and a second transistor including:
a second semiconductor layer including a fourth portion, a fifth portion, and a sixth portion provided between the fourth portion and the fifth portion;a third conductive unit electrically connected to one of the first conductive unit, the second conductive unit, and the first gate electrode and electrically connected to the fourth portion;a fourth conductive unit separated from the third conductive unit and electrically connected to the fifth portion;a second gate electrode separated from the third conductive unit, the fourth conductive unit, and the second semiconductor layer, and the second gate electrode opposing the sixth portion; anda second gate insulating film provided between the sixth portion and the second gate electrode, an amount of hydrogen included in the first gate insulating film being larger than an amount of hydrogen included in the second gate insulating film.