Nitride semiconductor light emitting device and method of manufacturing the same

摘要

A nitride semiconductor light emitting device includes: an uneven substrate having an uneven structure in which recesses are formed; a first nitride semiconductor layer of a first conductive type formed on the uneven structure; a first light emitting layer formed on the first nitride semiconductor layer; and a second nitride semiconductor layer of a second conductive type formed on the light emitting layer, wherein each protrusion has a bottom made of a material or composition having a thermal expansion coefficient larger than the thermal expansion coefficient of the material or composition of the first nitride semiconductor layer.

主权项

1. A nitride semiconductor light emitting device comprising:
an uneven substrate having an uneven structure in which a recess is formed; a first nitride semiconductor layer of a first conductive type formed on the uneven structure; a first light emitting layer formed on the first nitride semiconductor layer; and a second nitride semiconductor layer of a second conductive type formed on the first light emitting layer, the second conductive type being different from the first conductive type, wherein the recess has a bottom having a heat expansion coefficient larger than a heat expansion coefficient of the first nitride semiconductor layer, the uneven substrate includes a first substrate comprising silicon, an insulating layer formed on the first substrate, and a second substrate comprising silicon formed on the insulating layer, the recess is an opening formed in the second substrate such that the bottom of the recess is part of a surface of the insulating layer, and the recess has a side surface having a plane direction different from a plane direction of a main surface of the second substrate.