发明名称 Reducing capacitive charging in electronic devices
摘要 The invention relates to an electronic device for measuring and/or controlling a property of an analyte (100). The electronic device comprises: i) an electrode (Snsr) forming an interface with the analyte (100) in which the electrode (Snsr) is immersed in operational use, the interface having an interface temperature (T), and ii) a resistive heater (Htr) being thermally and capacitively coupled to the electrode (Snsr), the resistive heater (Htr) being configured for setting the interface temperature (T) by controlling a current through the resistive heater (Htr). The resistive heater (Htr) is provided with signal integrity protection for reducing the capacitive charging of the electrode (Snsr) by the resistive heater (Htr) if the current through the resistive heater (Htr) is modulated. The invention further relates to an electrochemical sensor for determining a charged particle concentration in the analyte (100) using the thermo-potentiometric principle, the electrochemical sensor comprising such electronic device. The invention also relates to an RFID tag and a semiconductor device comprising such electrochemical sensor. The effect of the feature of the invention is that the capacitive charging effect between the resistive heater and the electrode is reduced by the signal integrity protection.
申请公布号 US9006738(B2) 申请公布日期 2015.04.14
申请号 US200913060949 申请日期 2009.07.21
申请人 NXP, B.V. 发明人 Merz Matthias
分类号 H01L29/66;G01N27/414 主分类号 H01L29/66
代理机构 代理人
主权项 1. An electronic semiconductor device for measuring and/or controlling a property of an analyte, the electronic semiconductor device comprising: an electrode, within the electronic semiconductor device, forming an interface with the analyte in which the electrode is immersed in operational use, the interface having an interface temperature (T), and a resistive heater, within the electronic semiconductor device, being capacitively coupled to the electrode, the resistive heater being configured for setting the interface temperature (T) based on a current passed through the resistive heater, wherein the electronic semiconductor device includes a signal integrity protection module for reducing the capacitive charging of the electrode by the resistive heater, wherein the resistive heater comprises two terminals and a conductive path between the terminals; and wherein the signal integrity protection further comprises a conductive shield, within the electronic semiconductor device, arranged between the resistive heater and the electrode, wherein the conductive shield is connected to a fixed reference potential.
地址 Eindhoven NL