| 发明名称 | Method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof | ||
| 摘要 | Aspects of the present invention relate to method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof. Various embodiments include a method for reducing lateral extrusion formed in semiconductor structures. The method can include removing a portion of a first lateral extrusion in an aluminum layer of the semiconductor structure, and determining a post-removal thickness of a dielectric layer positioned adjacent the aluminum layer. The post-removal thickness may be determined subsequent to the removing of the portion of the first lateral extrusion. The method can also include determining a difference between the post-removal thickness of the dielectric layer and a pre-removal thickness of the dielectric layer. | ||
| 申请公布号 | US9006703(B2) | 申请公布日期 | 2015.04.14 |
| 申请号 | US201313955531 | 申请日期 | 2013.07.31 |
| 申请人 | International Business Machines Corporation | 发明人 | Adderly Shawn A.;Czabaj Brian M.;Delibac Daniel A.;Gambino Jeffrey P.;Moon Matthew D.;Thomas David C. |
| 分类号 | H01L21/00;H01L49/02;H01L21/66 | 主分类号 | H01L21/00 |
| 代理机构 | Hoffman Warnick LLC | 代理人 | Cain David;Hoffman Warnick LLC |
| 主权项 | 1. A method comprising: removing a portion of a first lateral extrusion in an aluminum layer of a semiconductor structure; determining a post-removal thickness of a dielectric layer positioned adjacent the aluminum layer subsequent to the removing of the portion of the first lateral extrusion; and determining a difference between the post-removal thickness of the dielectric layer and a pre-removal thickness of the dielectric layer. | ||
| 地址 | Armonk NY US | ||