Magnetic random access memory device and method of writing data therein

摘要

In a method of writing data in an MRAM device, a first operation unit is selected in a plurality of memory cells of the MRAM device. First to n-th switching pulses are sequentially applied to the first operation unit to write data in first to n-th groups of memory cells of the first operation unit, respectively. The n-th switching pulse may have a current level lower than that of an (n−1)th switching pulse, where n is an integer larger than at least 1. The n-th switching pulse may have a pulse width narrower than that of an (n−1)th switching pulse, where n is an integer larger than at least 1. The technique can be repeated for a second operation unit. A device and system are disclosed in which different current switching pulses are applied to multiple groups of memory cells within the first and/or second operation units.

主权项

1. A method of writing data in an MRAM device, comprising:
selecting a first operation unit in a plurality of memory cells of the MRAM device; sequentially applying first to n-th switching pulses to the first operation unit to write data in first to n-th groups of memory cells of the first operation unit, respectively, the n-th switching pulse having a current level lower than that of an (n−1)th switching pulse, wherein n is an integer larger than at least 1; and experimentally determining the current levels of the first to n-th switching pulses by an experiment on a difference between current levels required for writing data in the first to n-th groups of memory cells.