发明名称 Error correction and recovery in chained memory architectures
摘要 Electronic apparatus, systems, and methods to construct and operate the electronic apparatus and/or systems include a memory unit configured to receive data flow from two directions. The memory unit can be configured serially in a chain with other memory units. The chain can include an error check and correcting unit (ECC). Additional apparatus, systems, and methods are disclosed.
申请公布号 US9009556(B2) 申请公布日期 2015.04.14
申请号 US201414190637 申请日期 2014.02.26
申请人 Micron & Technology, Inc. 发明人 Resnick David R.
分类号 G08C25/02;H04L1/18;G06F11/20;G06F11/10;G06F11/07;G06F12/14 主分类号 G08C25/02
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A memory unit comprising: a memory section having a plurality of memory devices arranged as a vertical stack of individual memory chips; and an interface section coupled to the memory section, the interface section structured to couple into a chain exterior to the memory unit, and further structured to allow access to the memory section in response to a request to access the memory section received from either of two directions in the chain.
地址 Boise ID US