| 发明名称 | Measurement method of overlay mark | ||
| 摘要 | A measurement method of an overlay mark is provided. An overlay mark on a wafer is measured with a plurality of different wavelength regions of an optical measurement tool, so as to obtain a plurality of overlay values corresponding to the wavelength regions. The overlay mark on the wafer is measured with an electrical measurement tool to obtain a reference overlay value. The wavelength region that corresponds to the overlay value closest to the reference overlay value is determined as a correct wavelength region for the overlay mark. | ||
| 申请公布号 | US9007571(B2) | 申请公布日期 | 2015.04.14 |
| 申请号 | US201313971776 | 申请日期 | 2013.08.20 |
| 申请人 | United Microelectronics Corp. | 发明人 | Tzai Wei-Jhe;Hung Kuei-Chun;Yu Chun-Chi;Chen Chien-Hao;Lin Chia-Ching |
| 分类号 | G01N21/00;G03F9/00 | 主分类号 | G01N21/00 |
| 代理机构 | J.C. Patents | 代理人 | J.C. Patents |
| 主权项 | 1. A measurement method of an overlay mark, comprising: measuring an overlay mark on a wafer with a plurality of different wavelength regions of an optical measurement tool, so as to obtain a plurality of overlay values corresponding to the wavelength regions; measuring the overlay mark on the wafer with an electrical measurement tool to obtain a reference overlay value; and determining, as a correct wavelength region for the overlay mark, the wavelength region that corresponds to the overlay value closest to the reference overlay value. | ||
| 地址 | Hsinchu TW | ||