Resistive random access memory using amorphous metallic glass oxide as a storage medium

摘要

The present invention relates to a resistive random access memory using amorphous metallic glass oxide as a storage medium, comprising a substrate, an insulation layer, a first electrode layer, a resistive memory layer, and a second electrode layer. In the present invention, an amorphous metallic glass oxide layer is mainly used as the resistive memory layer of the resistive random access memory. Therefore, the resistive random access memory with storage medium of amorphous metallic glass oxide thin film having advantages of low operation voltage, low power consumption, and high set/reset resistance ratio are provided without using any thermal annealing processes or forming processes.

主权项

1. A resistive random access memory using amorphous metallic glass oxide as a storage medium, comprising:
a substrate; an insulation layer formed on the substrate; a first electrode layer formed on the insulation layer through an adhesion-enhancing layer; a resistive memory layer formed on the first electrode layer, wherein the resistive memory layer is an amorphous metallic glass oxide layer; and a second electrode layer formed on the resistive memory layer; wherein the amorphous metallic glass oxide layer is an oxide of Zr53Cu28Al12Ni6.