| 发明名称 |
Method of patterning platinum layer |
| 摘要 |
A method of patterning a platinum layer includes the following steps. A substrate is provided. A platinum layer is formed on the substrate. An etching process is performed to pattern the platinum layer, wherein an etchant used in the etching process simultaneously includes at least a chloride-containing gas and at least a fluoride-containing gas. |
| 申请公布号 |
US9006105(B2) |
申请公布日期 |
2015.04.14 |
| 申请号 |
US201313953753 |
申请日期 |
2013.07.30 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Lu Hsin-Yi;Lin Yu-Chi;Wang Jeng-Ho |
| 分类号 |
H01L21/3213;H01L21/4763;B81C1/00 |
主分类号 |
H01L21/3213 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method of patterning a platinum layer, comprising:
providing a substrate; forming a platinum layer on the substrate; and performing an etching process to pattern the platinum layer, wherein an etchant used in the etching process comprises at least a chloride-containing gas and at least a fluoride-containing gas, and a flow rate of the chloride-containing gas is substantially lower than a flow rate of the fluoride-containing gas. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
