| 发明名称 | Cu pillar bump with electrolytic metal sidewall protection | ||
| 摘要 | A method of forming a bump structure includes providing a semiconductor substrate and forming an under-bump-metallurgy (UBM) layer on the semiconductor substrate. The method further includes forming a mask layer on the UBM layer, wherein the mask layer has an opening exposing a portion of the UBM layer. The method further includes forming a copper layer in the opening of the mask layer and removing a portion of the mask layer to form a space between the copper layer and the mask layer. The method further includes performing an electrolytic process to fill the space with a metal layer and removing the mask layer. | ||
| 申请公布号 | US9006097(B2) | 申请公布日期 | 2015.04.14 |
| 申请号 | US201313927753 | 申请日期 | 2013.06.26 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Lu Wen-Hsiung;Cheng Ming-Da;Lin Chih-Wei;Chang Jacky;Liu Chung-Shi;Yu Chen-Hua |
| 分类号 | H01L23/00 | 主分类号 | H01L23/00 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A method of forming a bump structure, comprising: providing a semiconductor substrate; forming an under-bump-metallurgy (UBM) layer on a semiconductor substrate; forming a mask layer on the UBM layer, wherein the mask layer has an opening exposing a portion of the UBM layer; forming a copper layer in the opening of the mask layer; removing a portion of the mask layer to form a space between the copper layer and the mask layer; performing an electrolytic process to fill the space with a metal layer; and removing the mask layer. | ||
| 地址 | TW | ||