| 发明名称 | Methods and apparatus for enhanced gas flow rate control | ||
| 摘要 | The present invention provides methods and apparatus for controlling gas flow to a semiconductor-processing chamber. The invention includes deactivating ratio setpoint feedback control in a flow ratio controller; initiating gas flow through the flow ratio controller; moving valves of the flow ratio controller to a preset position based on a stored position when an upstream pressure reaches a stored upstream pressure value, wherein the stored position and the stored upstream pressure value were stored during a prior process run; determining that steady state flow ratio controller output flows have been reached; and activating ratio setpoint feedback control in the flow ratio controller. Numerous additional features are disclosed. | ||
| 申请公布号 | US9004107(B2) | 申请公布日期 | 2015.04.14 |
| 申请号 | US201213591212 | 申请日期 | 2012.08.21 |
| 申请人 | Applied Materials, Inc. | 发明人 | Gregor Mariusch;Lane John W.;Rice Michael Robert;Hough Justin |
| 分类号 | F16K11/20;G05D16/20;C23C16/455;G05D7/06 | 主分类号 | F16K11/20 |
| 代理机构 | Dugan & Dugan, PC | 代理人 | Dugan & Dugan, PC |
| 主权项 | 1. A method of controlling gas flow to a semiconductor-processing chamber, the method comprising: deactivating ratio setpoint feedback control in a flow ratio controller; initiating gas flow through the flow ratio controller; moving valves of the flow ratio controller to a preset position based on a stored position when an upstream pressure reaches a stored upstream pressure value, wherein the stored position and the stored upstream pressure value were stored during a prior process run; determining that steady state flow ratio controller output flows have been reached; and activating ratio setpoint feedback control in the flow ratio controller. | ||
| 地址 | Santa Clara CA US | ||