Method of manufacturing a semiconductor device with a carrier having a cavity and semiconductor device

摘要

A method includes providing a carrier having a first cavity, providing a dielectric foil with a metal layer attached to the dielectric foil, placing a first semiconductor chip in the first cavity of the carrier, and applying the dielectric foil to the carrier.

主权项

1. A semiconductor device comprising:
a leadframe having a cavity in a main surface of the leadframe, wherein the cavity extends from a raised portion of the leadframe to a first edge of the leadframe, opposite the raised portion, and wherein the leadframe has only one raised portion and only one cavity; a first electrically conductive layer disposed on a base surface of the cavity, wherein the first electrically conductive layer comprises metal nanoparticles; and a first semiconductor chip having a first surface disposed on the first electrically conductive layer, wherein the first semiconductor chip comprises a first electrode on the first surface and a second electrode on a second surface, the second surface is opposite the first surface, and a sum of a height of the first electrically conductive layer and a height of the first semiconductor chip is within twenty microns of a height of the cavity.