Radiation induced diode structure

摘要

A semiconductor device containing an NPN bipolar junction transistor may be formed by forming a p-type radiation induced diode structure (RIDS) region in an intrinsic p-type base region of the NPN bipolar junction transistor at a boundary of the intrinsic p-type base region with a dielectric layer over a substrate of the semiconductor device, between an emitter of the NPN bipolar junction transistor and an extrinsic p-type base region of the NPN bipolar junction transistor. The p-type RIDS region has a doping density high enough to prevent inversion of a surface of the p-type RIDS region adjacent to the dielectric layer when trapped charge is accumulated in the dielectric layer, while the intrinsic p-type base region may invert from the trapped charge forming the radiation induced diode structure. The p-type RIDS region is separated from the emitter and from the extrinsic base region by portions of the intrinsic base region.

主权项

1. A semiconductor device, comprising:
a substrate comprising semiconductor material; a dielectric layer over said substrate; an NPN bipolar junction transistor, comprising:
an n-type emitter in said substrate, said n-type emitter extending up to said dielectric layer;a p-type extrinsic base region in said substrate, said p-type extrinsic base region extending up to said dielectric layer, said p-type extrinsic base regions being laterally separated from said n-type emitter;a p-type intrinsic base region in said substrate, said p-type intrinsic base region abutting said n-type emitter and extending up to said dielectric layer between said n-type emitter and said p-type extrinsic base region, said dielectric layer being at least 50 nanometers thick over said p-type intrinsic base region between said n-type emitter and said p-type extrinsic base region; anda p-type radiation induced diode structure (RIDS) region in said substrate, said p-type RIDS region extending up to said dielectric layer between said n-type emitter and said p-type extrinsic base region, said p-type RIDS region being laterally separated from said p-type extrinsic base region and from said n-type emitter, said p-type RIDS region having an average doping density greater than 5 times and average doping density of said p-type intrinsic base region.