发明名称 Middle-of-the-line constructs using diffusion contact structures
摘要 An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions.
申请公布号 US9006100(B2) 申请公布日期 2015.04.14
申请号 US201213568737 申请日期 2012.08.07
申请人 GLOBALFOUNDRIES Inc. 发明人 Rashed Mahbub;Ma Yuansheng;Lin Irene;Stephens Jason;Deng Yunfei;Lei Yuan;Kye Jongwook;Augur Rod;Ahmed Shibly;Kengeri Subramani;Venkatesan Suresh
分类号 H01L21/4763;H01L27/02;H01L21/8238;H01L21/768 主分类号 H01L21/4763
代理机构 Ditthavong & Steiner, P.C. 代理人 Ditthavong & Steiner, P.C.
主权项 1. A method comprising: providing a first diffusion region in a substrate; providing at least one metal1 (M1) layer of the substrate; providing, via a first lithography process, a first diffusion contact structure, the first diffusion contact structure being separated from the at least one metal1 (M1) layer of the substrate; providing, via a second lithography process, a second diffusion contact structure, wherein the first and second lithography processes are performed at different times; and coupling, via a double patterning technique, the first diffusion contact structure to the first diffusion region and the second diffusion contact structure, wherein the coupling of the first diffusion contact structure to the second diffusion contact structure comprises stitching the first and second diffusion contact structures, the stitching comprising providing the first and second diffusion contact structures to include an overlapping area of the first and second diffusion contact structures, and the overlapping area, in a plan view, covers less than all of the first and less than all of the second diffusion contact structures.
地址 Grand Cayman KY