Semiconductor device and method for manufacturing the same

摘要

An object is to improve water resistance and reliability of a semiconductor device by reducing the degree of peeling of a film. In a semiconductor device, a first inorganic insulating layer, a semiconductor element layer, a second inorganic insulating layer, an organic insulating layer, and a third inorganic insulating layer are sequentially stacked over a substrate. The second inorganic insulating layer is in contact with the first inorganic insulating layer in an opening portion provided in the semiconductor element layer. The third inorganic insulating layer is in contact with the second inorganic insulating layer in an opening portion provided in the organic insulating layer. In a region where the second inorganic insulating layer and the third inorganic insulating layer are in contact with each other, the second inorganic insulating layer has a plurality of irregularities or openings.

主权项

1. A method for manufacturing a semiconductor device, comprising steps of:
forming a first inorganic insulating layer over a substrate; forming a semiconductor element layer including a transistor over the first inorganic insulating layer; forming a first opening portion in the semiconductor element layer; forming a second inorganic insulating layer over the semiconductor element layer and a surface of the first inorganic insulating layer exposed by the first opening portion; forming an organic insulating layer over the semiconductor element layer with the second inorganic insulating layer interposed therebetween; forming a second opening portion in the organic insulating layer, forming a plurality of opening portions in parts of the second inorganic insulating layer, which are exposed by the second opening portion; and forming a third inorganic insulating layer over the plurality of opening portions and the organic insulating layer.