Tile array PA module using quadrature balanced PA MMICs

摘要

A system for power amplification is presented. A tile array power amplifier (PA) module for use in a phased array includes a module with a radio frequency (RF) side and a direct current (DC) side, a top edge, a left edge a bottom edge and a right edge. Four PA dies are mounted in each quadrature of the RF side of the module. RF input connectors are mounted on the RF side to bring RF inputs to the PA dies. RF output connectors are mounted to the DC side to output amplified signals from the PA dies. The PA dies are formed, in part, with gallium nitride (GaN) and are mounted to the module in such a way that the tile array PA module is able to generate about 100 watts of RF power and dissipate about 200 watts of heat while amplifying signals over 10 GHz.

主权项

1. A tile array power amplifier (PA) module for use in a phased array comprising:
a module with a radio frequency (RF) side and a direct current (DC) side, a top edge, a left edge a bottom edge and a right edge; a first PA die mounted to the RF side of the module adjacent the top edge and the left edge; a second PA die mounted to the RF side of the module adjacent the top edge and the right edge; a third PA die mounted to the RF side of the module adjacent the left edge and the bottom edge; and a fourth PA die mounted to the RF side of the module adjacent the right edge and the bottom edge; a first RF input connector mounted on the RF side between the first PA die and the left edge configured to deliver a first RF input signal to the first PA die; a second RF input connector mounted on the RF side between the second PA die and the right edge configured to deliver a second RF input signal to the second PA die; a third RF input connector mounted on the RF side between the third PA die and the left edge configured to deliver a third RF input signal to the third PA die; a fourth RF input connector mounted on the RF side between the fourth PA die and the right edge configured to deliver a fourth RF input signal to the fourth PA die; a first RF output connector mounted to the DC side and configured to output a first amplified signal from the first PA die; a second RF output connector mounted to the DC side and configured to output a second amplified signal from the second PA die; a third RF output connector mounted to the DC side and configured to output a third amplified signal from the third PA die; and a fourth RF output connector mounted to the DC side and configured to output a fourth amplified signal from the fourth PA die.