| 主权项 |
1. An electronic device comprising a metallization stack, the metallization stack comprising a barrier metal deposited electrolessly and a substantially gold-free wetting layer deposited electrolessly, the barrier metal contacting the wetting layer, and the wetting layer being wettable by solder, wherein the barrier metal has a thickness of 0.2micrometer to 1 micrometer and all values and ranges subsumed therein, the barrier metal comprises at least one of the elements nickel and cobalt;
wherein the wetting layer comprises:
1. tin or a tin alloy;2. silver tungsten alloy with 3-4 atomic percent tungsten;3. cobalt tin alloy, cobalt copper alloy, cobalt silver alloy, cobalt copper tin alloy, cobalt copper silver alloy, cobalt silver tin alloy, or cobalt copper silver tin alloy;4. nickel copper alloy, nickel silver alloy, nickel copper silver alloy, nickel copper tin alloy, nickel silver tin alloy, or nickel copper silver tin alloy;5. iron tin alloy, iron copper alloy, iron silver alloy, iron copper tin alloy, iron copper silver alloy, iron silver tin alloy, or iron copper silver tin alloy;6. a thickness of nickel alloy having a first composition and a thickness of nickel alloy having a second composition;7. a thickness of cobalt alloy having a first composition and a thickness of cobalt alloy having a second composition; or8. a thickness of iron alloy having a first composition and a thickness of iron alloy having a second composition; further comprising one or more electrical contact pads being at least partially covered by the barrier metal and/or one or more through-substrate via conductors being at least partially covered by the barrier metal; and solder contacting the wetting layer. |
