Non-volatile memory device having bit lines and source lines arranged in parallel and manufacturing method thereof

摘要

A non-volatile memory device comprises first wires on and above a first plane; second wires extending in a direction crossing the first wires, on and above a second plane, third wires extending in parallel with the second wires on and above a fourth plane, and memory cells provided to correspond to three-dimensional cross-points of the first wires and the third wires, respectively, each of the memory cells including a transistor and a variable resistance element, the transistor including a first main electrode, a second main electrode, and a control electrode, the variable resistance element being placed on and above a third plane and including a lower electrode, an upper electrode and a variable resistance layer, wherein the upper electrode is connected to corresponding one of the third wires; and further comprises a first contact plug extending from the first main electrode to the second plane and connected to corresponding one of the second wires; a second contact plug extending from the second main electrode to the second plane; and a third contact plug extending from the second contact plug and connected to the lower electrode; wherein the second main electrode and the lower electrode are connected to each other via the second contact plug and the third contact plug.

主权项

1. A non-volatile memory device comprising:
a substrate; first wires extending in a first direction on and above a first plane parallel to a main surface of the substrate; second wires extending in a second direction crossing the first direction, on and above a second plane which is parallel to the main surface of the substrate and more distant from the substrate than the first plane; third wires extending in the second direction on and above a fourth plane which is parallel to the main surface of the substrate and more distant from the substrate than the second plane; and memory cells provided to correspond to three-dimensional cross-points of the first wires and the third wires, respectively, wherein: each of the memory cells includes one transistor and one variable resistance element, the transistor is provided on and above the substrate, and includes a first main electrode, a second main electrode, and a control electrode, the control electrode is connected to or integral with corresponding one of the first wires, the variable resistance element is placed on and above a third plane which is parallel to the main surface of the substrate, more distant from the substrate than the second plane and closer to the substrate than the fourth plane, and the variable resistance element includes a lower electrode, an upper electrode and a variable resistance layer disposed between the lower electrode and the upper electrode, the upper electrode is connected to corresponding one of the third wires, the non-volatile memory device further comprises:
a first contact plug extending from an upper end surface of the first main electrode to the second plane and connected to corresponding one of the second wires;a second contact plug extending from an upper end surface of the second main electrode to the second plane; anda third contact plug extending from an upper end surface of the second contact plug and connected to the lower electrode, and the second main electrode and the lower electrode are connected to each other via the second contact plug and the third contact plug.