Compositions comprising sulfonamide material and processes for photolithography

摘要

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

主权项

1. A method for processing a photoresist composition, comprising;
(a) applying on a substrate a photoresist composition comprising:
(i) one or more resins,(ii) a photoactive component, and(iii) one or more resins that comprise a group of the formula RS(═O)2—X—NR′2, wherein X is a group with 1 to 8 carbon atoms, R is a non-hydrogen substituent, and the groups R′ are each independently a hydrogen atom or a non-hydrogen substituent, thereby forming a photoresist layer, wherein the (iii) one or more resins are substantially non-mixable with the (i) one or more resins; and (b) immersion exposing the photoresist layer to radiation activating for the photoresist composition.