发明名称 Photonic device structure and method of manufacture
摘要 Disclosed method and apparatus embodiments provide a photonic device with optical isolation from a supporting substrate. A generally rectangular cavity in cross section is provided below an element of the photonic device and the element may be formed from a ledge of the supporting substrate which is over the cavity.
申请公布号 US9005458(B2) 申请公布日期 2015.04.14
申请号 US201313776836 申请日期 2013.02.26
申请人 Micron Technology, Inc. 发明人 Sandhu Gurtej;Meade Roy
分类号 B29D11/00;H01L21/308;G02B6/136;G02B6/12 主分类号 B29D11/00
代理机构 Dickstein Shapiro LLP 代理人 Dickstein Shapiro LLP
主权项 1. A method of forming a photonic structure, comprising: etching a semiconductor substrate to create a cavity below a ledge portion of the semiconductor substrate; and forming an element of a photonic device from the ledge portion of the semiconductor substrate; and wherein the photonic device element comprises a waveguide core; wherein the method of forming the photonic structure further comprises filling the cavity with a cladding material; and wherein the cavity has a generally rectangular cross-sectional shape.
地址 Boise ID US