| 摘要 |
PROBLEM TO BE SOLVED: To sufficiently reduce contact resistance of a source electrode formed on a surface of a semiconductor substrate.SOLUTION: A semiconductor device comprises: a left p layer 312 formed on an inner surface of a trench 25 formed on a surface of a semiconductor substrate 20; an nlayer 32 which is formed on surfaces of p layers 311, 312 and serves as a source region on each surface of each of the p layers 311, 312; a player 33 formed to pierce the nlayer 32 formed on the right p layer 311; and a common source electrode (main electrode) 50 to which the nlayer 32 and the player 33 on the right of a gate electrode 40, and the nlayer 32 in the trench 25 on the left of the gate electrode are connected. |
