| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress a current from being concentrated at a part of a collector electrode.SOLUTION: A semiconductor device comprises: a semiconductor substrate 10; a sub collector layer 12a including a convex part 24a having a pair of lateral faces 28 whose angles to an upper surface 26 are 90° or more and that are in an opposed position relation, and the other lateral face 29 whose angle to the upper surface 26 is less than 90° and that has an inverse tapered shape; a collector layer 14 having a lower impurity concentration than the sub collector layer 12a, a base layer 16 having a conductivity type opposite to that of the collector layer 14, and an emitter layer 18 having a prohibition band width larger than that of the base layer 16, that are sequentially provided on the sub collector layer 12a; a pair of collector electrodes 30d ohmic-contacted with the pair of lateral faces 28 respectively; collector wiring 31 arranged separately from the other lateral face 29, and commonly connecting the pair of collector electrodes 30d; and a base electrode 32a and an emitter electrode 34 provided on the base layer 16 and on the emitter layer 18, respectively.</p> |
