METHOD FOR FORMING NON-VOLATILE MEMORY CELL AND STRUCTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile memory cell having an uncomplicated structure and a small cell area.SOLUTION: A non-volatile memory cell includes: a well 220 formed on a substrate 210; a first source/drain dope region 231, a second source/drain dope region 232, and a third source/drain dope region 233 formed on the well 220; a first lower dielectric layer 251 formed between the first source/drain dope region 231 and the second source/drain dope region 232; a second lower dielectric layer 252 formed between the second source/drain dope region 232 and the third source/drain dope region 233; a first charge trap layer 261 formed on the lower dielectric layer 251; a second charge trap layer 262 formed on the second lower dielectric layer 252; a block layer 271 formed on the first charge trap layer 261; a memory gate 281 formed on the block layer 271; and a selection gate 282 formed on the second charge trap layer 262.