| 摘要 |
PROBLEM TO BE SOLVED: To reduce an adverse effect caused by metal which composes a silicide electrode when a MOSFET is formed on a semiconductor substrate.SOLUTION: By a semiconductor device manufacturing method, a top face and lateral faces of a gate electrode 31 are covered with a barrier layer 40. The barrier layer 40 is composed of a silicon nitride film (SiN). Since a top face barrier layer 41 exists integrally with the gate electrode 31 from the time of deposition, formation of the top face barrier layer 41 can be performed by using the same mask pattern. Accordingly, the barrier layer 40 can be formed by a simple manufacturing method. |
