发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To enable manufacturing of a semiconductor device having high adhesion.SOLUTION: A semiconductor device manufacturing method comprises the steps of: (i) laminating a first layer formed by at least one of a group consisting of titanium, titanium nitride and vanadium so as to cover a part of a semiconductor layer; (ii) laminating an aluminum layer consisting primarily of aluminum on the side opposite to the semiconductor layer across the first layer; (iii) oxidizing the aluminum layer; (iv) laminating a titanium layer formed by titanium on the side opposite to the aluminum layer across the first layer; (v)laminating a titanium nitride layer formed by titanium nitride on the side opposite to the aluminum layer across the titanium layer; and (vi) laminating an electrode layer on the side opposite to the titanium layer across the titanium nitride layer. |
申请公布号 |
JP2015070026(A) |
申请公布日期 |
2015.04.13 |
申请号 |
JP20130201317 |
申请日期 |
2013.09.27 |
申请人 |
TOYODA GOSEI CO LTD |
发明人 |
MURAKAMI TOMOAKI;OKA TORU;ANZAI KOTA |
分类号 |
H01L21/28;C23C14/06;H01L21/285 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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