发明名称 |
METHOD OF PRODUCING METAL OXIDE FILM, METAL OXIDE FILM, THIN FILM TRANSISTOR, DISPLAY, IMAGE SENSOR, AND X-RAY SENSOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a metal oxide film capable of producing a dense metal oxide film at relatively low temperature under the atmospheric pressure, and to provide a metal oxide film, a thin film transistor having high mobility, a display, an image sensor and an X-ray sensor.SOLUTION: A method of producing a metal oxide film includes a step of forming a metal oxide precursor film by coating a substrate with a solution containing a metal nitrate, and then drying the coating film, and a step of transforming the metal oxide precursor film to a metal oxide film by irradiating the metal oxide precursor film with an ultraviolet ray including more than one peak component of illuminance of 10 mW/cmor more in a wavelength region of 300 nm or less. A metal oxide film produced by this method and a device including the same are also provided. |
申请公布号 |
JP2015070211(A) |
申请公布日期 |
2015.04.13 |
申请号 |
JP20130205315 |
申请日期 |
2013.09.30 |
申请人 |
FUJIFILM CORP |
发明人 |
TAKADA MASAHIRO;TANAKA ATSUSHI;SUZUKI MASAYUKI |
分类号 |
H01L21/208;C01B13/18;C01G15/00;G02F1/1368;H01L21/336;H01L27/144;H01L27/146;H01L29/786;H01L51/50;H05B33/14 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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