| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electrostatic protection circuit capable of suppressing more the effect of positive charge that is applied by static electricity.SOLUTION: There are provided an external circuit connection terminal 102, a video signal line 96, and a first electrostatic protection circuit 301. The first electrostatic protection circuit 301 includes an n-type transistor 330-1, and a p-type transistor 310-1. A gate 333-1a and a source 334-1 of the n-type transistor are connected to a low power source wiring VSS. A drain 335-1 of the n-type transistor and a drain 315-1 of the p-type transistor are connected to a video signal line 96. A gate 313-1a of the p-type transistor and a source 314-1 of the p-type transistor are connected to a high potential power source wiring VDD. A semiconductor layer of the n-type transistor is arranged to contact to a region which is going to be a source and a region which is going to be a channel, otherwise, a low concentration impurity region is arranged between a region which is going to be a source and a region which is going to be a channel.</p> |
