| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition and a resist pattern forming method.SOLUTION: The resist composition, which generates an acid upon exposure and whose solubility in a developer changes by the action of an acid, contains a base component (A) whose solubility in a developer changes by the action of an acid and an organic solvent component (S). The organic solvent component (S) contains an organic solvent (S1) comprising a compound (s-1) represented by general formula (1). [In the formula, Rrepresents a hydrogen atom or a hydroxyl group; Rand Reach independently represent a hydrogen atom or a C1-C3 alkyl group; and Rand Reach independently represent a C1-C3 alkyl group.] |
