发明名称 OXIDE DIELECTRIC, METHOD OF PRODUCING THE DIELECTRIC, PRECURSOR FOR OXIDE DIELECTRIC, SOLID ELECTRONIC DEVICE AND METHOD OF PRODUCING THE DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide an oxide dielectric having excellent characteristics, a solid electronic device provided with the oxide dielectric, e.g. a high-frequency filter, a patch antennas, a capacitor, a semiconductor device or a micro-electromechanical system.SOLUTION: An oxide layer 30 composed of an oxide dielectric contains an oxide which has a crystalline phase of a pyrochlore crystal structure and comprises bismuth(Bi), niobium(Nb) and optionally unavoidable impurities, and, with the atomic number of bismuth(Bi) as 1, the atomic number of niobium(Nb) is 1.3 or more and 1.7 or less.</p>
申请公布号 JP2015067475(A) 申请公布日期 2015.04.13
申请号 JP20130202328 申请日期 2013.09.27
申请人 JAPAN ADVANCED INSTITUTE OF SCIENCE & TECHNOLOGY HOKURIKU 发明人 SHIMODA TATSUYA;INOUE SATOSHI;ARIGA TOMOKI
分类号 C01G33/00;H01G4/10;H01G4/12;H01G4/33;H01L21/316;H01L21/822;H01L21/8246;H01L27/04;H01L27/105 主分类号 C01G33/00
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