| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film semiconductor device comprising a practical conductive barrier material capable of preventing oxidation-reduction reaction.SOLUTION: An amorphous electride is used as a conductive barrier material (5) provided between a semiconductor layer (4) and each of a source electrode (6) and a drain electrode (7). This conductive barrier material (5) is formed through sputter deposition to have a thickness in the range from 2 nm to 15nm, exhibits electric properties comparable to conventional Mo electrode TFTs, and satisfactorily operates as an n-type Oxide-TFT electrode.</p> |
