| 摘要 |
PROBLEM TO BE SOLVED: To improve performance of a semiconductor device.SOLUTION: A semiconductor device comprises: an interlayer insulation film IL7 formed on a semiconductor substrate; a pad PD formed on the interlayer insulation film IL7; an insulation film PA formed on the interlayer insulation film IL7 so as to cover the pad PD; and an opening OP1 formed in the insulation film PA to expose a part of the pad PD. The pad PD is formed by laminated conductive films having an Al-containing conductive film AM1, a barrier conductor film BR2 on the Al-containing conductive film AM1 and an Al-containing conductive film AM2 on the barrier conductor film BR2, and includes a thick film part PD1 having the Al-containing conductive film AM1, the barrier conductor film BR2 and the Al-containing conductive film AM2, and a thin film part PD2 having the Al-containing conductive film AM1 and not having the Al-containing conductive film AM2. The thin film part PD2 is thinner than the thick film part PD1 and the thin film part PD2 of the pad PD is exposed from the opening OP1. |
