发明名称 PLASMA PROCESSING APPARATUS
摘要 A plasma processing apparatus prevents formation of local plasma in a penetration opening of a processing container. An insulation member (45) as an impedance adjustment member is installed on an opening bottom surface of the penetration opening of the processing container. The insulation member (45) is made of a material having less than or equal to 10, desirably 4 of specific inductive capacity. The formation of local plasma can be prevented in a gate opening (41) by making an electric impedance of the penetration opening from plasma by the insulation member (45) larger than a liner (60) of a body container (2A). A cover member (47) is arranged on the insulation member (45). The insulation member (45) can be protected by plasma by covering the surface of the insulation member (45).
申请公布号 KR20150039683(A) 申请公布日期 2015.04.13
申请号 KR20140129974 申请日期 2014.09.29
申请人 도쿄엘렉트론가부시키가이샤 发明人 도조 도시히로;사사키 가즈오;미나미 마사토
分类号 H01L21/205;H01L21/3065;H05H1/46 主分类号 H01L21/205
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